Vishay SiHD2N80AE Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3
- RS Stock No.:
- 188-4982
- Distrelec Article No.:
- 304-38-847
- Mfr. Part No.:
- SIHD2N80AE-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR37.24
FREE delivery for orders over RM 500.00
Limited stock
- Plus 1,400 left, shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 490 | MYR3.724 | MYR37.24 |
| 500 - 990 | MYR3.538 | MYR35.38 |
| 1000 + | MYR3.36 | MYR33.60 |
*price indicative
- RS Stock No.:
- 188-4982
- Distrelec Article No.:
- 304-38-847
- Mfr. Part No.:
- SIHD2N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | SiHD2N80AE | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.9Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.25mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series SiHD2N80AE | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.9Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.25mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
E Series Power MOSFET.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Related links
- Vishay SiHD2N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK SIHU2N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- Vishay TrenchFET Type N-Channel Power MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel Power MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223 BSP320SH6327XTSA1