P-Channel MOSFET, 14 A, 60 V, 8-Pin WDFN onsemi NVTFS5116PLTAG
- RS Stock No.:
- 184-1074
- Mfr. Part No.:
- NVTFS5116PLTAG
- Manufacturer:
- onsemi
Subtotal (1 reel of 1500 units)**
MYR2,919.00
Temporarily out of stock - back order for despatch 14/08/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
|---|---|---|
| 1500 + | MYR1.946 | MYR2,919.00 |
**price indicative
- RS Stock No.:
- 184-1074
- Mfr. Part No.:
- NVTFS5116PLTAG
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | WDFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 72 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 21 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 3.15mm | |
| Number of Elements per Chip | 1 | |
| Length | 3.15mm | |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Height | 0.8mm | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type WDFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 72 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 21 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 3.15mm | ||
Number of Elements per Chip 1 | ||
Length 3.15mm | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Height 0.8mm | ||
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