Diodes Inc N-Channel MOSFET, 1 A, 20 V, 3-Pin X2-DFN1006 DMN2450UFB4-7R
- RS Stock No.:
- 182-6891
- Mfr. Part No.:
- DMN2450UFB4-7R
- Manufacturer:
- DiodesZetex

1 / 1
Bulk discount available
Subtotal (1 reel of 3000 units)**
MYR513.00
Temporarily out of stock - back order for despatch 26/11/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR500.00
Units | Per Unit | Per Reel** |
---|---|---|
3000 - 3000 | MYR0.171 | MYR513.00 |
6000 - 9000 | MYR0.168 | MYR504.00 |
12000 + | MYR0.165 | MYR495.00 |
**price indicative
- RS Stock No.:
- 182-6891
- Mfr. Part No.:
- DMN2450UFB4-7R
- Manufacturer:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 1 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | X2-DFN1006 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 700 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 0.9V | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 900 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±12 V | |
Maximum Operating Temperature | +150 °C | |
Length | 1.05mm | |
Width | 0.65mm | |
Typical Gate Charge @ Vgs | 1.3 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Height | 0.35mm | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 1 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type X2-DFN1006 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 700 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.9V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 900 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±12 V | ||
Maximum Operating Temperature +150 °C | ||
Length 1.05mm | ||
Width 0.65mm | ||
Typical Gate Charge @ Vgs 1.3 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Height 0.35mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
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