Vishay Single 1 Type N-Channel Power MOSFET, 2.5 A, 500 V

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Subtotal (1 pack of 5 units)*

MYR33.93

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5 - 10MYR6.786MYR33.93
15 - 20MYR6.474MYR32.37
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RS Stock No.:
180-8659
Mfr. Part No.:
IRF820ASPBF
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

500V

Maximum Drain Source Resistance Rds

Maximum Power Dissipation Pd

50W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

17nC

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Length

2.79mm

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Width

10.67 mm

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay IRF820AS is a N-channel power MOSFET having drain to source(Vds) voltage of 500V.The gate to source voltage(VGS) is 30V. It is having D2PAK (TO-263)and I2PAK (TO-262) package. It offers drain to source resistance (RDS.) 3ohms at 10VGS. Maximum drain current 17A.

Low gate charge Qg results in simple drive requirement

Improved gate, avalanche, and dynamic dV/dt ruggedness

Fully characterized capacitance and avalanche voltage and current

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