Vishay Single 1 Type N-Channel Power MOSFET, 5.2 A, 200 V TO-263 IRF620SPBF

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Subtotal (1 tube of 50 units)*

MYR261.30

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  • 700 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
50 - 50MYR5.226MYR261.30
100 - 150MYR5.145MYR257.25
200 +MYR5.045MYR252.25

*price indicative

RS Stock No.:
180-8301
Mfr. Part No.:
IRF620SPBF
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5.2A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

0.8Ω

Maximum Power Dissipation Pd

50W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

14nC

Minimum Operating Temperature

-55°C

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay IRF620S is a N-channel power MOSFET having drain to source(Vds) voltage of 200V.The gate to source voltage(VGS) is 20V. It is having D2PAK (TO-263) package. It offers drain to source resistance (RDS.) 0.8ohms at 10VGS. Maximum drain current 5.2A.

Surface mount

Available in tape and reel

Dynamic dv/dt rating

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