Vishay Single EF 1 Type N-Channel Power MOSFET, 21 A, 600 V, 3-Pin TO-220AB SIHP21N60EF-GE3

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Subtotal (1 pack of 2 units)*

MYR35.40

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Units
Per Unit
Per Pack*
2 +MYR17.70MYR35.40

*price indicative

Packaging Options:
RS Stock No.:
180-7768
Mfr. Part No.:
SIHP21N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

600V

Series

EF

Package Type

TO-220AB

Pin Count

3

Maximum Drain Source Resistance Rds

0.176Ω

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

84nC

Maximum Power Dissipation Pd

227W

Forward Voltage Vf

1.2V

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

10.52 mm

Length

14.4mm

Height

6.71mm

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay SIHP21N60EF is a N-channel EF series power MOSFET with fast body diode having drain to source voltage(Vds) of 600V and gate to source voltage (VGS) 30V. It is having TO-220AB package. It is offers drain to source resistance (RDS.) of 0.176ohms at 10VGS. Maximum drain current 21A.

Fast body diode MOSFET using E series technology

Reduced trr, Qrr, and IRRM

Low figure-of-merit (FOM): Ron x Qg

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