Infineon OptiMOS 3 Type N-Channel MOSFET, 15.2 A, 200 V Enhancement, 8-Pin TDSON

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 5000 units)*

MYR18,860.00

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 19 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
5000 - 5000MYR3.772MYR18,860.00
10000 - 15000MYR3.689MYR18,445.00
20000 +MYR3.621MYR18,105.00

*price indicative

RS Stock No.:
178-7500
Mfr. Part No.:
BSC900N20NS3GATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

15.2A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS 3

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

9nC

Maximum Operating Temperature

150°C

Height

1.1mm

Width

5.35 mm

Standards/Approvals

No

Length

6.1mm

Automotive Standard

No

RoHS Status: Exempt

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links