Vishay Siliconix TrenchFET Type N-Channel MOSFET, 14.4 A, 250 V Enhancement, 8-Pin SO-8 Si7190ADP-T1-RE3

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Subtotal 750 units (supplied on a reel)*

MYR6,055.50

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Units
Per Unit
750 - 1495MYR8.074
1500 +MYR7.67

*price indicative

Packaging Options:
RS Stock No.:
178-3875P
Mfr. Part No.:
Si7190ADP-T1-RE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14.4A

Maximum Drain Source Voltage Vds

250V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

56.8W

Typical Gate Charge Qg @ Vgs

14.9nC

Maximum Operating Temperature

150°C

Height

1.07mm

Standards/Approvals

No

Length

5.99mm

Width

5 mm

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
CN
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