N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220 onsemi FCP190N65S3
- RS Stock No.:
- 172-4632
- Mfr. Part No.:
- FCP190N65S3
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)**
MYR91.11
20 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
---|---|---|
10 - 190 | MYR9.111 | MYR91.11 |
200 - 390 | MYR8.356 | MYR83.56 |
400 + | MYR7.711 | MYR77.11 |
**price indicative
- RS Stock No.:
- 172-4632
- Mfr. Part No.:
- FCP190N65S3
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 17 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 190 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 144 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±30 V | |
Number of Elements per Chip | 1 | |
Width | 4.7mm | |
Length | 10.67mm | |
Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Height | 16.3mm | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 144 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 16.3mm | ||
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