N-Channel MOSFET, 20 A, 100 V, 3-Pin DPAK ROHM RD3P200SNTL
- RS Stock No.:
- 172-0472
- Mfr. Part No.:
- RD3P200SNTL
- Manufacturer:
- ROHM
Bulk discount available
Subtotal (1 pack of 10 units)**
MYR51.95
Temporarily out of stock - back order for despatch 07/08/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
---|---|---|
10 - 620 | MYR5.195 | MYR51.95 |
630 - 1240 | MYR5.086 | MYR50.86 |
1250 + | MYR4.934 | MYR49.34 |
**price indicative
- RS Stock No.:
- 172-0472
- Mfr. Part No.:
- RD3P200SNTL
- Manufacturer:
- ROHM
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | ROHM | |
Channel Type | N | |
Maximum Continuous Drain Current | 20 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | DPAK (TO-252) | |
Series | RD3P200SN | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 50 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 20 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Width | 6.4mm | |
Typical Gate Charge @ Vgs | 55 nC @ 10 V | |
Length | 6.8mm | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Forward Diode Voltage | 1.5V | |
Minimum Operating Temperature | -55 °C | |
Height | 2.3mm | |
Select all | ||
---|---|---|
Manufacturer ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Series RD3P200SN | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 50 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 20 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 6.4mm | ||
Typical Gate Charge @ Vgs 55 nC @ 10 V | ||
Length 6.8mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.3mm | ||
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