P-Channel MOSFET, 60 A, 40 V, 3-Pin DPAK Toshiba TJ60S04M3L
- RS Stock No.:
- 171-2414
- Mfr. Part No.:
- TJ60S04M3L
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 reel of 2000 units)**
MYR11,580.00
Temporarily out of stock - back order for despatch 27/11/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
---|---|---|
2000 - 2000 | MYR5.79 | MYR11,580.00 |
4000 - 6000 | MYR5.663 | MYR11,326.00 |
8000 + | MYR5.559 | MYR11,118.00 |
**price indicative
- RS Stock No.:
- 171-2414
- Mfr. Part No.:
- TJ60S04M3L
- Manufacturer:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Toshiba | |
Channel Type | P | |
Maximum Continuous Drain Current | 60 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 9.4 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 90 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +10 V | |
Width | 7mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Length | 6.5mm | |
Typical Gate Charge @ Vgs | 125 nC @ 10 V | |
Forward Diode Voltage | 1.2V | |
Automotive Standard | AEC-Q101 | |
Height | 2.3mm | |
Select all | ||
---|---|---|
Manufacturer Toshiba | ||
Channel Type P | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 90 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +10 V | ||
Width 7mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 6.5mm | ||
Typical Gate Charge @ Vgs 125 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Automotive Standard AEC-Q101 | ||
Height 2.3mm | ||
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