N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-220 FP Infineon SPA20N60C3XKSA1
- RS Stock No.:
- 171-1920
- Mfr. Part No.:
- SPA20N60C3XKSA1
- Manufacturer:
- Infineon
Subtotal (1 pack of 2 units)**
MYR41.34
4 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
4 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
---|---|---|
2 + | MYR20.67 | MYR41.34 |
**price indicative
- RS Stock No.:
- 171-1920
- Mfr. Part No.:
- SPA20N60C3XKSA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 20.7 A | |
Maximum Drain Source Voltage | 650 V | |
Series | CoolMOS™ | |
Package Type | TO-220 FP | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 190 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.9V | |
Minimum Gate Threshold Voltage | 2.1V | |
Maximum Power Dissipation | 34.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | 30 V | |
Width | 4.85mm | |
Number of Elements per Chip | 1 | |
Length | 10.65mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 87 nC @ 10 V | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 0 | |
Height | 16.15mm | |
Typical Power Gain | 0 | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20.7 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 34.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 30 V | ||
Width 4.85mm | ||
Number of Elements per Chip 1 | ||
Length 10.65mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 87 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 0 | ||
Height 16.15mm | ||
Typical Power Gain 0 | ||
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