N-Channel MOSFET, 80 A, 80 V, 8-Pin TDSON Infineon BSC070N10NS5ATMA1
- RS Stock No.:
- 170-2298
- Mfr. Part No.:
- BSC070N10NS5ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 5000 units)**
MYR21,235.00
Temporarily out of stock - back order for despatch 23/07/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
---|---|---|
5000 - 5000 | MYR4.247 | MYR21,235.00 |
10000 - 15000 | MYR4.153 | MYR20,765.00 |
20000 + | MYR4.077 | MYR20,385.00 |
**price indicative
- RS Stock No.:
- 170-2298
- Mfr. Part No.:
- BSC070N10NS5ATMA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 80 V | |
Package Type | TDSON | |
Series | OptiMOS™ 5 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 10.2 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.8V | |
Minimum Gate Threshold Voltage | 2.2V | |
Maximum Power Dissipation | 83 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | 20 V | |
Width | 6.35mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
Length | 5.49mm | |
Height | 1.1mm | |
Forward Diode Voltage | 1.1V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type TDSON | ||
Series OptiMOS™ 5 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 10.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Width 6.35mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Length 5.49mm | ||
Height 1.1mm | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
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