N-Channel MOSFET, 35 A, 60 V, 3-Pin DPAK STMicroelectronics STD35NF06T4
- RS Stock No.:
- 168-7481
- Mfr. Part No.:
- STD35NF06T4
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 reel of 2500 units)**
MYR6,675.00
12500 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
|---|---|---|
| 2500 - 2500 | MYR2.67 | MYR6,675.00 |
| 5000 - 7500 | MYR2.611 | MYR6,527.50 |
| 10000 + | MYR2.563 | MYR6,407.50 |
**price indicative
- RS Stock No.:
- 168-7481
- Mfr. Part No.:
- STD35NF06T4
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 35 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Series | STripFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 80 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 44.5 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 6.6mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 6.2mm | |
| Height | 2.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series STripFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 80 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 44.5 nC @ 10 V | ||
Transistor Material Si | ||
Length 6.6mm | ||
Maximum Operating Temperature +175 °C | ||
Width 6.2mm | ||
Height 2.4mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
- N-Channel MOSFET 60 V, 3-Pin DPAK STMicroelectronics STD30NF06LT4
- N-Channel MOSFET 60 V, 3-Pin DPAK STMicroelectronics STD35NF06LT4
- Silicon P-Channel MOSFET 60 V, 3-Pin DPAK STMicroelectronics STD35P6LLF6
- P-Channel MOSFET 60 V, 3-Pin DPAK ROHM RD3L03BATTL1
- N-Channel MOSFET 60 V, 3-Pin DPAK STMicroelectronics STD16NF06LT4
- N-Channel MOSFET 60 V, 3-Pin DPAK STMicroelectronics STD60NF06T4
- N-Channel MOSFET 60 V, 3-Pin DPAK STMicroelectronics STD12NF06LT4
- N-Channel MOSFET 60 V, 3-Pin DPAK STMicroelectronics STD12NF06T4