N-Channel MOSFET, 5.5 A, 30 V, 6-Pin SSOT-6 onsemi FDC645N
- RS Stock No.:
- 166-3306
- Mfr. Part No.:
- FDC645N
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 reel of 3000 units)**
MYR4,620.00
Temporarily out of stock - back order for despatch 26/06/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
---|---|---|
3000 - 3000 | MYR1.54 | MYR4,620.00 |
6000 - 9000 | MYR1.506 | MYR4,518.00 |
12000 + | MYR1.478 | MYR4,434.00 |
**price indicative
- RS Stock No.:
- 166-3306
- Mfr. Part No.:
- FDC645N
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 5.5 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SSOT-6 | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 48 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.8V | |
Maximum Power Dissipation | 1.6 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -12 V, +12 V | |
Number of Elements per Chip | 1 | |
Width | 1.7mm | |
Typical Gate Charge @ Vgs | 13 nC @ 4.5 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Length | 3mm | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Height | 1mm | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SSOT-6 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 48 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Number of Elements per Chip 1 | ||
Width 1.7mm | ||
Typical Gate Charge @ Vgs 13 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 3mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
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