onsemi PowerTrench N-Channel MOSFET, 50 A, 250 V, 3-Pin D2PAK FDB2710
- RS Stock No.:
- 166-1758
- Mfr. Part No.:
- FDB2710
- Manufacturer:
- onsemi

This image is representative of the product range
1 / 2
Bulk discount available
Subtotal (1 reel of 800 units)**
MYR10,791.20
Available for back order.*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR500.00
Units | Per Unit | Per Reel** |
---|---|---|
800 - 800 | MYR13.489 | MYR10,791.20 |
1600 - 2400 | MYR13.192 | MYR10,553.60 |
3200 + | MYR12.949 | MYR10,359.20 |
**price indicative
- RS Stock No.:
- 166-1758
- Mfr. Part No.:
- FDB2710
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 50 A | |
Maximum Drain Source Voltage | 250 V | |
Package Type | D2PAK (TO-263) | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 42 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 260 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 78 nC @ 10 V | |
Width | 11.33mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 4.83mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type D2PAK (TO-263) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 42 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 260 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 78 nC @ 10 V | ||
Width 11.33mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
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