Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8

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Subtotal (1 reel of 3000 units)*

MYR4,731.00

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Units
Per Unit
Per Reel*
3000 - 3000MYR1.577MYR4,731.00
6000 - 9000MYR1.542MYR4,626.00
12000 +MYR1.514MYR4,542.00

*price indicative

RS Stock No.:
165-6920
Mfr. Part No.:
SIS415DNT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

20V

Package Type

PowerPAK 1212-8

Series

TrenchFET Gen III

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0095Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

55.5nC

Maximum Power Dissipation Pd

52W

Maximum Gate Source Voltage Vgs

12 V

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

3.4 mm

Height

0.8mm

Standards/Approvals

RoHS

Length

3.4mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor