Nexperia Type P-Channel MOSFET, -5.3 A, -20 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

MYR2,226.00

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  • 3,000 unit(s) shipping from 03 June 2026
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Units
Per Unit
Per Reel*
3000 - 3000MYR0.742MYR2,226.00
6000 - 9000MYR0.726MYR2,178.00
12000 +MYR0.712MYR2,136.00

*price indicative

RS Stock No.:
153-0708
Mfr. Part No.:
PMV30XPEAR
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-5.3A

Maximum Drain Source Voltage Vds

-20V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

57mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

5.44W

Maximum Operating Temperature

150°C

Height

1mm

Standards/Approvals

No

Length

3mm

Width

1.4 mm

Automotive Standard

AEC-Q101

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Very fast switching

Enhanced power dissipation capability: Ptot = 980 mW

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Relay driver

High-speed line driver

High-side loadswitch

Switching circuits

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