IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T

This image is representative of the product range

Bulk discount available
View bulk pricing options

Subtotal (1 unit)*

MYR114.32

Add to Basket
Select or type quantity
In Stock
  • 81 unit(s) ready to ship from another location
  • Plus 845 unit(s) shipping from 12 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per Unit
1 - 2MYR114.32
3 - 4MYR110.31
5 +MYR104.78

*price indicative

RS Stock No.:
125-8041
Distrelec Article No.:
302-53-370
Mfr. Part No.:
IXFN360N10T
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

360A

Maximum Drain Source Voltage Vds

100V

Series

GigaMOS Trench HiperFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

830W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

525nC

Maximum Operating Temperature

175°C

Length

38.23mm

Height

9.6mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy