N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-220AB onsemi HUF75639P3
- RS Stock No.:
- 124-1674
- Mfr. Part No.:
- HUF75639P3
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 tube of 50 units)**
MYR321.10
450 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Tube** |
---|---|---|
50 - 50 | MYR6.422 | MYR321.10 |
100 - 150 | MYR6.323 | MYR316.15 |
200 + | MYR6.20 | MYR310.00 |
**price indicative
- RS Stock No.:
- 124-1674
- Mfr. Part No.:
- HUF75639P3
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 56 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220AB | |
Series | UltraFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 25 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 200 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 110 nC @ 20 V | |
Maximum Operating Temperature | +175 °C | |
Length | 10.67mm | |
Transistor Material | Si | |
Width | 4.83mm | |
Number of Elements per Chip | 1 | |
Height | 9.4mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 56 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series UltraFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 25 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 110 nC @ 20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Transistor Material Si | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
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