Dual N/P-Channel-Channel MOSFET, 1.9 A, 2.7 A, 20 V, 6-Pin SOT-23 onsemi FDC6327C
- RS Stock No.:
- 124-1358
- Mfr. Part No.:
- FDC6327C
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 reel of 3000 units)**
MYR5,469.00
6000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
---|---|---|
3000 - 3000 | MYR1.823 | MYR5,469.00 |
6000 - 9000 | MYR1.795 | MYR5,385.00 |
12000 + | MYR1.76 | MYR5,280.00 |
**price indicative
- RS Stock No.:
- 124-1358
- Mfr. Part No.:
- FDC6327C
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 1.9 A, 2.7 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | SOT-23 | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 130 mΩ, 270 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 960 mW | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Number of Elements per Chip | 2 | |
Width | 1.7mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Length | 3mm | |
Typical Gate Charge @ Vgs | 2.85 nC @ 4.5 V, 3.25 nC @ 4.5 V | |
Minimum Operating Temperature | -55 °C | |
Height | 1mm | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 1.9 A, 2.7 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 130 mΩ, 270 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 960 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 2 | ||
Width 1.7mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Typical Gate Charge @ Vgs 2.85 nC @ 4.5 V, 3.25 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
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