Infineon OptiMOS Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 4-Pin SOT-223 BSP372NH6327XTSA1

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MYR129.35

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Per Pack*
50 - 200MYR2.587MYR129.35
250 - 450MYR2.458MYR122.90
500 +MYR2.335MYR116.75

*price indicative

Packaging Options:
RS Stock No.:
110-7754
Distrelec Article No.:
304-36-977
Mfr. Part No.:
BSP372NH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

270mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.8W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

9.5nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

6.5mm

Height

1.6mm

Standards/Approvals

No

Width

3.5 mm

Automotive Standard

AEC-Q101

Infineon OptiMOS™ Small Signal MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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