N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220 STMicroelectronics STP310N10F7
- RS Stock No.:
- 103-2008
- Mfr. Part No.:
- STP310N10F7
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 50 units)**
MYR895.95
Temporarily out of stock - back order for despatch 19/09/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Tube** |
---|---|---|
50 - 50 | MYR17.919 | MYR895.95 |
100 - 150 | MYR17.525 | MYR876.25 |
200 + | MYR17.203 | MYR860.15 |
**price indicative
- RS Stock No.:
- 103-2008
- Mfr. Part No.:
- STP310N10F7
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 180 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220 | |
Series | STripFET H7 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2.7 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 315 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 4.6mm | |
Maximum Operating Temperature | +175 °C | |
Length | 10.4mm | |
Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 15.75mm | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Series STripFET H7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 315 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.6mm | ||
Maximum Operating Temperature +175 °C | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 15.75mm | ||
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