Infineon StrongIRFET N channel-Channel Power MOSFET, 125 A, 30 V Enhancement, 3-Pin PG-TO263-3 IPB018N03LF2SATMA1

N

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MYR9.02

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Per Unit
1 - 9MYR9.02
10 - 24MYR7.58
25 - 99MYR4.70
100 - 499MYR4.57
500 +MYR4.45

*price indicative

RS Stock No.:
762-987
Mfr. Part No.:
IPB018N03LF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

125A

Maximum Drain Source Voltage Vds

30V

Series

StrongIRFET

Package Type

PG-TO263-3

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

167W

Typical Gate Charge Qg @ Vgs

46nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Height

4.83mm

Length

15.88mm

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 Power Transistor is a 30V N-channel MOSFET suitable for various applications. It operates in extreme conditions, with a maximum temperature rating of 175°C and conforms to environmental regulations.

100% avalanche tested

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

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