Vishay TrenchFET N channel-Channel MOSFET, 222 A, 80 V Enhancement, 10-Pin PowerPack SQJ182ER-T1_GE3

N
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Subtotal (1 unit)*

MYR14.60

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Units
Per Unit
1 - 9MYR14.60
10 - 24MYR9.52
25 - 99MYR4.95
100 - 499MYR4.82
500 +MYR4.76

*price indicative

RS Stock No.:
735-244
Mfr. Part No.:
SQJ182ER-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

222A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

PowerPack

Mount Type

Surface Mount

Pin Count

10

Maximum Drain Source Resistance Rds

0.0061Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

93nC

Maximum Operating Temperature

175°C

Width

5.3 mm

Length

7.5mm

Standards/Approvals

RoHS Compliant

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

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