ROHM HP8KF7H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSOP-8 HP8KF7HTB1

N

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Subtotal (1 tape of 2 units)*

MYR16.56

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Units
Per Unit
Per Tape*
2 - 18MYR8.28MYR16.56
20 - 48MYR7.30MYR14.60
50 - 198MYR6.55MYR13.10
200 - 998MYR5.28MYR10.56
1000 +MYR5.15MYR10.30

*price indicative

Packaging Options:
RS Stock No.:
687-364
Mfr. Part No.:
HP8KF7HTB1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Dual N

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

150V

Package Type

HSOP-8

Series

HP8KF7H

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

62mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

26W

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Width

6.1 mm

Length

6.1mm

Height

1.1mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
JP
The ROHM N channel power MOSFET designed to efficiently manage power in various electronic applications. With a low on-resistance of 62mΩ and a compact HSOP8 package, this MOSFET ensures superior thermal management and high reliability. Its specifications support a continuous drain current of ±18.5A, making it ideal for demanding tasks such as motor drives. Offering excellent energy efficiency and compliance with RoHS and halogen-free standards, it seamlessly integrates into advanced electronic designs while ensuring environmental responsibility.

Optimised for low on resistance, enhancing overall efficiency

Compact HSOP8 package allows for space-saving designs

Ideal for a variety of applications, including motor drives

Meets RoHS and halogen-free requirements for environmental safety

High continuous and pulsed drain current ratings ensure reliability under load

Excellent thermal management with low thermal resistance ratings

Designed for high-performance switching applications with minimal delay

Stable operation across a wide temperature range from -55 to +150°C

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