Infineon IGLT65 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R045D2ATMA1

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1 - 9MYR50.50
10 - 99MYR45.46
100 - 499MYR41.90
500 - 999MYR38.86
1000 +MYR34.85

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RS Stock No.:
351-887
Mfr. Part No.:
IGLT65R045D2ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-HDSOP-16

Series

IGLT65

Mount Type

Surface

Pin Count

16

Maximum Drain Source Resistance Rds

0.054Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

124W

Maximum Gate Source Voltage Vgs

10 V

Typical Gate Charge Qg @ Vgs

6nC

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC for Industrial Applications

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-side cooled package

JEDEC qualified (JESD47, JESD22)

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