onsemi PowerTrench Power Clip Type N-Channel MOSFET, 126 A, 25 V Enhancement, 8-Pin PQFN-8 NTTFD1D8N02P1E
- RS Stock No.:
- 333-403
- Mfr. Part No.:
- NTTFD1D8N02P1E
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 5 units)*
MYR25.74
FREE delivery for orders over RM 500.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tape* |
|---|---|---|
| 5 - 45 | MYR5.148 | MYR25.74 |
| 50 - 95 | MYR4.888 | MYR24.44 |
| 100 - 495 | MYR4.526 | MYR22.63 |
| 500 - 995 | MYR4.164 | MYR20.82 |
| 1000 + | MYR4.01 | MYR20.05 |
*price indicative
- RS Stock No.:
- 333-403
- Mfr. Part No.:
- NTTFD1D8N02P1E
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | PowerTrench Power Clip | |
| Package Type | PQFN-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 36W | |
| Typical Gate Charge Qg @ Vgs | 37.5nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3 mm | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series PowerTrench Power Clip | ||
Package Type PQFN-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 36W | ||
Typical Gate Charge Qg @ Vgs 37.5nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 3.3 mm | ||
Length 3.3mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Power MOSFET optimized for low-voltage applications, offering high efficiency and minimal conduction losses. With its DSC-6 package, it provides excellent thermal performance and space-saving benefits for modern electronic designs. This device ensures reliable operation with low R DS(on) and robust current handling.
Small Footprint for Compact Design
Low QG and Capacitance to Minimize Driver Losses
Pb Free
RoHS Compliant
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