STMicroelectronics PD5 Type N-Channel MOSFET, 2.5 A, 40 V Enhancement, 10-Pin PowerSO-10RF PD55003TR-E

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

MYR59.23

Add to Basket
Select or type quantity
In Stock
  • 1,187 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 - 9MYR59.23
10 - 99MYR53.28
100 - 499MYR49.15
500 - 999MYR45.59
1000 +MYR40.87

*price indicative

Packaging Options:
RS Stock No.:
330-270
Mfr. Part No.:
PD55003TR-E
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

40V

Series

PD5

Package Type

PowerSO-10RF

Mount Type

Surface

Pin Count

10

Maximum Drain Source Resistance Rds

0.75Ω

Channel Mode

Enhancement

Minimum Operating Temperature

65°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

31.7W

Maximum Operating Temperature

165°C

Height

3.6mm

Length

15.65mm

Width

9.6 mm

Standards/Approvals

ECOPACK, JEDEC-approved, J-STD-020B, RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The STMicroelectronics RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFET and It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55003 boasts excellent gain, linearity and reliability thanks to ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for car mobile radios.

Excellent thermal stability

Common source configuration

POUT 3 W with 17dB gain at the rate 500 MHz or 12.5 V

Related links