ROHM UT6 2 Type N-Channel MOSFET, 100 V Enhancement, 8-Pin HUML2020L8 UT6KE5TCR
- RS Stock No.:
- 264-564
- Mfr. Part No.:
- UT6KE5TCR
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 25 units)*
MYR38.55
FREE delivery for orders over RM 500.00
In Stock
- 3,025 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tape* |
|---|---|---|
| 25 - 75 | MYR1.542 | MYR38.55 |
| 100 - 225 | MYR1.464 | MYR36.60 |
| 250 - 475 | MYR1.355 | MYR33.88 |
| 500 - 975 | MYR1.249 | MYR31.23 |
| 1000 + | MYR1.203 | MYR30.08 |
*price indicative
- RS Stock No.:
- 264-564
- Mfr. Part No.:
- UT6KE5TCR
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | UT6 | |
| Package Type | HUML2020L8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 207mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 100V | ||
Series UT6 | ||
Package Type HUML2020L8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 207mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM 100V 2.0A dual N-channel power MOSFET in a DFN2020-8D package features low on-resistance, making it ideal for switching applications and DC/DC converters. It integrates two 100V MOSFETs in a compact surface-mount design.
Low on-resistance
Small Surface Mount Package
Pb-free plating and RoHS compliant
Halogen Free
Related links
- ROHM UT6 2 Type P 100 V Enhancement, 8-Pin HUML2020L8 UT6ME5TCR
- ROHM Pch+Pch UT6 2 Type P-Channel MOSFET 100 V Enhancement, 8-Pin HUML2020L8 UT6JE5TCR
- ROHM RF4P060BG Type N-Channel MOSFET 100 V Enhancement, 8-Pin HUML2020L8
- ROHM RF4P060BG Type N-Channel MOSFET 100 V Enhancement, 8-Pin HUML2020L8 RF4P060BGTCR
- ROHM QH8 2 Type N-Channel MOSFET 8-Pin TSMT-8 QH8KE5TCR
- ROHM QS8 2 Type N 100 V Enhancement, 8-Pin TSMT-8 QS8M51HZGTR
- ROHM Nch+Nch HP8K 2 Type N-Channel MOSFET 8-Pin HSOP-8 HP8KE7TB1
- ROHM Dual (Nch+Pch) HP8K 2 Type N 100 V Enhancement, 8-Pin HSOP-8 HP8ME5TB1