Nexperia PSM Type N-Channel MOSFET, 185 A, 25 V Enhancement, 5-Pin LFPAK PSMN1R6-25YLEX

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Subtotal (1 tape of 1 unit)*

MYR8.28

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1 - 9MYR8.28
10 - 99MYR7.44
100 - 499MYR6.85
500 - 999MYR6.40
1000 +MYR5.69

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Packaging Options:
RS Stock No.:
219-387
Mfr. Part No.:
PSMN1R6-25YLEX
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

185A

Maximum Drain Source Voltage Vds

25V

Package Type

LFPAK

Series

PSM

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.88mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

124W

Maximum Gate Source Voltage Vgs

10 V

Typical Gate Charge Qg @ Vgs

27nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel ASFET in an LFPAK56 package is optimized for low RDS(on) and a strong safe operating area, making it Ideal for hot-swap, inrush, and linear-mode applications. Key applications include hot-swap in 12V to 20V systems, e-Fuse, DC switch, load switch, and battery protection.

Copper clip for low parasitic inductance and resistance

High reliability LFPAK package

Qualified to 175 °C

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