Nexperia NextPower-S3 Schottky-Plus technology Type N-Channel MOSFET, 290 A, 40 V Enhancement, 5-Pin LFPAK
- RS Stock No.:
- 219-338
- Mfr. Part No.:
- PSMN1R0-40YSHX
- Manufacturer:
- Nexperia
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Subtotal (1 tape of 1 unit)*
MYR17.07
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | MYR17.07 |
| 10 - 99 | MYR15.39 |
| 100 - 499 | MYR14.16 |
| 500 - 999 | MYR13.13 |
| 1000 + | MYR11.77 |
*price indicative
- RS Stock No.:
- 219-338
- Mfr. Part No.:
- PSMN1R0-40YSHX
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 290A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NextPower-S3 Schottky-Plus technology | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 290A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NextPower-S3 Schottky-Plus technology | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET features Advanced TrenchMOS Super junction technology. This product has been designed and qualified for high performance power switching applications. It is designed for high-performance applications, including synchronous rectification, DC-to-DC converters, server power supplies, brushless DC motor control, battery protection, and load-switch/eFuse solutions. It offers high efficiency and reliable performance across a wide range of power management tasks.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
Related links
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- Nexperia PSM Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN1R0-30YLDX
- Nexperia PSM Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN1R0-40YLDX
