onsemi FGA40N65SMD IGBT, 40 A 650 V, 3-Pin TO-3PN, Through Hole

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Subtotal (1 pack of 2 units)*

MYR49.42

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2 - 6MYR24.71MYR49.42
8 - 14MYR23.84MYR47.68
16 +MYR22.64MYR45.28

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Packaging Options:
RS Stock No.:
864-8782
Mfr. Part No.:
FGA40N65SMD
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

349 W

Package Type

TO-3PN

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.2 x 5 x 20.1mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Discrete IGBTs, Fairchild Semiconductor


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IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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