Semikron Danfoss SKM75GB12T4 Dual Half Bridge IGBT Module, 115 A 1200 V, 7-Pin SEMITRANS2, Panel Mount
- RS Stock No.:
- 687-4961
- Mfr. Part No.:
- SKM75GB12T4
- Manufacturer:
- Semikron Danfoss
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Subtotal (1 unit)*
MYR429.99
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- 1 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 9 | MYR429.99 |
| 10 - 49 | MYR429.87 |
| 50 - 99 | MYR411.97 |
| 100 - 249 | MYR398.22 |
| 250 + | MYR389.62 |
*price indicative
- RS Stock No.:
- 687-4961
- Mfr. Part No.:
- SKM75GB12T4
- Manufacturer:
- Semikron Danfoss
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Semikron Danfoss | |
| Maximum Continuous Collector Current | 115 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Configuration | Dual Half Bridge | |
| Package Type | SEMITRANS2 | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 7 | |
| Transistor Configuration | Series | |
| Dimensions | 94 x 34 x 30.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Semikron Danfoss | ||
Maximum Continuous Collector Current 115 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Configuration Dual Half Bridge | ||
Package Type SEMITRANS2 | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 7 | ||
Transistor Configuration Series | ||
Dimensions 94 x 34 x 30.1mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -40 °C | ||
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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