STMicroelectronics STGF7NB60SL IGBT, 15 A 600 V, 3-Pin TO-220FP, Through Hole

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MYR19.51

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2 - 12MYR9.755MYR19.51
14 - 24MYR9.265MYR18.53
26 +MYR8.80MYR17.60

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Packaging Options:
RS Stock No.:
686-8360
Mfr. Part No.:
STGF7NB60SL
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

15 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-220FP

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 9.3mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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