Infineon FS75R12KT3GBOSA1 IGBT Module, 100 A 1.2 kV Module, Panel

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Subtotal (1 unit)*

MYR864.20

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Units
Per Unit
1 - 4MYR864.20
5 - 9MYR846.94
10 - 99MYR785.61
100 - 249MYR720.15
250 +MYR664.75

*price indicative

RS Stock No.:
273-7409
Mfr. Part No.:
FS75R12KT3GBOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

100A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

355W

Package Type

Module

Mount Type

Panel

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Maximum Operating Temperature

125°C

Height

20.5mm

Length

122mm

Standards/Approvals

EN61140, IEC61140

Automotive Standard

No

The Infineon IGBT module has 1200V collector emitter voltage and 75A continuous DC collector current. It has low stray inductance module design. This IGBT module available with fast TRENCHSTOP IGBT3, emitter controlled high efficiency diode and NTC.

Thermal resistance

High power density

Compact module concept

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