Infineon BSC018NE2LSATMA1 IGBT, 153 A 25 V, 8-Pin PG-TDSON-8, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 pack of 5 units)*

MYR30.97

Add to Basket
Select or type quantity
In Stock
  • Plus 95 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
5 - 45MYR6.194MYR30.97
50 - 495MYR5.162MYR25.81
500 - 995MYR4.424MYR22.12
1000 - 2495MYR4.346MYR21.73
2500 +MYR4.268MYR21.34

*price indicative

RS Stock No.:
273-5234
Mfr. Part No.:
BSC018NE2LSATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

153 A

Maximum Collector Emitter Voltage

25 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

2.5 W

Package Type

PG-TDSON-8

Mounting Type

Through Hole

Channel Type

N

Pin Count

8

The Infineon MOSFET is a 25 V N channel MOSFET. It is optimized for high performance buck converter. This MOSFET is qualified according to JEDEC for target applications. This MOSFET is halogen free according to IEC61249 2 21 standard.

RoHS compliant
Pb free lead plating
Very low on resistance
Superior thermal resistance
100 percent avalanche tested

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links