Infineon IKY40N120CH3XKSA1, Type N-Channel IGBT, 40 A 1200 V, 4-Pin TO-247, Through Hole
- RS Stock No.:
- 273-2986
- Mfr. Part No.:
- IKY40N120CH3XKSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
MYR39.17
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- 114 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 4 | MYR39.17 |
| 5 - 9 | MYR38.42 |
| 10 - 24 | MYR35.57 |
| 25 - 49 | MYR32.59 |
| 50 + | MYR30.13 |
*price indicative
- RS Stock No.:
- 273-2986
- Mfr. Part No.:
- IKY40N120CH3XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 500W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 21.1mm | |
| Height | 5.1mm | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Width | 15.9 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 500W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 21.1mm | ||
Height 5.1mm | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Width 15.9 mm | ||
Automotive Standard No | ||
The Infineon IGBT3 in TO-247PLUS 4pin package. The 4 pin package configuration provides ultra low inductance to the gate emitter control loop with the 4 pin package directly to the gate driver and allows for reduction the both of E on and E off losses amo
Highest efficiency with lowest switching losses
High power density 1200V discrete IGBT
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