Infineon IGBT, 24 A 600 V TO-263
- RS Stock No.:
- 258-7063
- Mfr. Part No.:
- IKB10N60TATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1000 units)*
MYR6,348.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 06 August 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | MYR6.348 | MYR6,348.00 |
| 2000 + | MYR6.115 | MYR6,115.00 |
*price indicative
- RS Stock No.:
- 258-7063
- Mfr. Part No.:
- IKB10N60TATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 24A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-263 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1 | |
| Series | TRENCHSTOPTM | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 24A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-263 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1 | ||
Series TRENCHSTOPTM | ||
Automotive Standard No | ||
The Infineon IGBT discrete with anti parallel diode in TO-263 package. It has significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and field stop concept. It has low conduction and switching losses also.
Lowest VCEsat drop for lower conduction losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg
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