onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

RS Stock No.:: 245-6973
Mfr. Part No.:: NXH350N100H4Q2F2P1G
Manufacturer:: onsemi

onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

This image is representative of the product range

Bulk discount available

Price Each (In a Tray of 36)**

MYR977.693

36 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR700.00

Units	Per Unit	Per Tray**
36 - 36	MYR977.693	MYR35,196.948
72 - 72	MYR976.254	MYR35,145.144
108 +	MYR974.815	MYR35,093.34

**price indicative

RS Stock No.:: 245-6973
Mfr. Part No.:: NXH350N100H4Q2F2P1G
Manufacturer:: onsemi

Datasheet - NXH350N100H4Q2F2P1G

Attribute	Value
Maximum Continuous Collector Current	303 A
Maximum Collector Emitter Voltage	1000 V
Maximum Gate Emitter Voltage	±20V
Number of Transistors	4
Maximum Power Dissipation	592 W
Package Type	Q2PACK (Pb-Free/Halide-Free)

onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

FREE delivery for orders over MYR700.00

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins

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