onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

RS Stock No.:: 245-6976
Mfr. Part No.:: NXH350N100H4Q2F2S1G
Manufacturer:: onsemi

onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

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Bulk discount available

Price Each**

MYR872.95

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FREE delivery for orders over MYR700.00

Units	Per Unit
1 - 1	MYR872.95
2 - 3	MYR871.68
4 - 7	MYR870.40
8 - 11	MYR869.13
12 +	MYR867.85

**price indicative

RS Stock No.:: 245-6976
Mfr. Part No.:: NXH350N100H4Q2F2S1G
Manufacturer:: onsemi

Datasheet - NXH350N100H4Q2F2S1G

Attribute	Value
Maximum Continuous Collector Current	303 A
Maximum Collector Emitter Voltage	1000 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	592 W
Number of Transistors	4
Package Type	Q2PACK (Pb-Free/Halide-Free)

onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

FREE delivery for orders over MYR700.00

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Solder pins

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