onsemi NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)

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MYR313.76

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1 - 1MYR313.76
2 - 3MYR309.06
4 - 7MYR304.42
8 - 11MYR299.85
12 +MYR295.36

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Packaging Options:
RS Stock No.:
245-6991
Mfr. Part No.:
NXH80B120MNQ0SNG
Manufacturer:
onsemi
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Brand

onsemi

Maximum Power Dissipation

69 W

Number of Transistors

2

Package Type

Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC


The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V 80 m SiC MOSFETs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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