Infineon FS200R06KE3BOSA1 IGBT Module, 200 A 600 V EconoPACK
- RS Stock No.:
- 244-5866
- Mfr. Part No.:
- FS200R06KE3BOSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
MYR913.96
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In Stock
- 7 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 1 | MYR913.96 |
| 2 - 2 | MYR895.68 |
| 3 - 3 | MYR877.77 |
| 4 - 4 | MYR860.23 |
| 5 + | MYR843.03 |
*price indicative
- RS Stock No.:
- 244-5866
- Mfr. Part No.:
- FS200R06KE3BOSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 200 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation | 600 W | |
| Package Type | EconoPACK | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 200 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation 600 W | ||
Package Type EconoPACK | ||
The infineon IGBT module the maximum rated collector emitter voltage is 600 V and toatal power dissipation is 600 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 1.90 V
Gate-emitter leakage current 400 nA
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 1.90 V
Gate-emitter leakage current 400 nA