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Infineon FS150R12KT4B11BOSA1 IGBT Module, 150 A 1200 V

RS Stock No.:: 244-5408
Mfr. Part No.:: FS150R12KT4B11BOSA1
Manufacturer:: Infineon

Infineon FS150R12KT4B11BOSA1 IGBT Module, 150 A 1200 V

Bulk discount available

Subtotal (1 unit)*

MYR1,333.50

FREE delivery for orders over RM 500.00

Temporarily out of stock

10 unit(s) shipping from 16 March 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit
1 - 1	MYR1,333.50
2 - 2	MYR1,306.83
3 - 3	MYR1,280.70
4 - 4	MYR1,255.09
5 +	MYR1,230.00

*price indicative

RS Stock No.:: 244-5408
Mfr. Part No.:: FS150R12KT4B11BOSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	150 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	+/-20V
	Number of Transistors	6
	Maximum Power Dissipation	750 W

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 150 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage +/-20V
	Number of Transistors 6
	Maximum Power Dissipation 750 W

Datasheet - FS150R12KT4B11BOSA1

The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.10 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.35 nF

Infineon FS150R12KT4B11BOSA1 IGBT Module, 150 A 1200 V

FREE delivery for orders over RM 500.00

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