Infineon FZ825R33HE4DBPSA1 Single IGBT Module, 825 A 3300 V AG-IHVB130

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Subtotal (1 tray of 2 units)*

MYR12,618.91

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Units
Per Unit
Per Tray*
2 - 2MYR6,309.455MYR12,618.91
4 - 4MYR6,183.28MYR12,366.56
6 +MYR6,059.605MYR12,119.21

*price indicative

RS Stock No.:
236-5198
Mfr. Part No.:
FZ825R33HE4DBPSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

825 A

Maximum Collector Emitter Voltage

3300 V

Number of Transistors

2

Maximum Power Dissipation

2400 kW

Package Type

AG-IHVB130

Configuration

Single

The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.

VCES is 3300 V
IC nom is 825 A
ICRM is 1650 A
It retains high current density

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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