Infineon FP75R12N2T7BPSA1, Type N-Channel IGBT, 75 A 1.2 kV, 31-Pin Module, Through Hole
- RS Stock No.:
- 232-6719
- Mfr. Part No.:
- FP75R12N2T7BPSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
MYR565.32
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Units | Per Unit |
|---|---|
| 1 - 9 | MYR565.32 |
| 10 - 19 | MYR554.04 |
| 20 - 29 | MYR542.93 |
| 30 - 39 | MYR532.09 |
| 40 + | MYR521.44 |
*price indicative
- RS Stock No.:
- 232-6719
- Mfr. Part No.:
- FP75R12N2T7BPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 20mW | |
| Package Type | Module | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 31 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | FP75R12N2T7 | |
| Height | 21.3mm | |
| Width | 45 mm | |
| Length | 107.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 20mW | ||
Package Type Module | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 31 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series FP75R12N2T7 | ||
Height 21.3mm | ||
Width 45 mm | ||
Length 107.5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's EconoPIM 2, 75 A three phase PIM IGBT module comes with TRENCHSTOP IGBT7, Emitter Controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. Also available with PressFIT technology. Potential applications include auxiliary inverters, motor drives and servo drives.
RoHS-compliant modules
Copper base plate for optimized heat spread
High power density
Related links
- Infineon 75 A 1.2 kV Through Hole
- Infineon 150 A 1.2 kV Through Hole
- Infineon FS150R12N2T7BPSA1 150 A 1.2 kV Through Hole
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- Infineon 75 A 1200 V Chassis
- Infineon FS75R12KE3GBOSA1 75 A 1.2 kV Through Hole
- Infineon 75 A 1.2 kV Through Hole
- Infineon FP75R12N2T7BPSA2 75 A 1200 V Panel