Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM

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Subtotal (1 unit)*

MYR1,080.76

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Units
Per Unit
1 - 9MYR1,080.76
10 - 99MYR1,048.34
100 - 249MYR1,006.41
250 - 499MYR956.09
500 +MYR898.72

*price indicative

Packaging Options:
RS Stock No.:
222-4794
Mfr. Part No.:
FF600R12KE4BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

600 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

1.2 kW

Package Type

AG-62MM

Configuration

Dual

Channel Type

N

Transistor Configuration

Common Emitter

The Infineon 62 mm 1200 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Also available as variation with common emitter:FF600R12KE4_E.

RoHS compliant
4 kV AC 1 min Insulation
Package with CTI > 400
High Creep age and Clearance Distances
UL/CSA Certification with UL1557 E83336

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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