Infineon IKW75N65EH5XKSA1 IGBT, 90 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 215-6675
- Mfr. Part No.:
- IKW75N65EH5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
MYR51.15
FREE delivery for orders over RM 500.00
In Stock
- Plus 54 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | MYR25.575 | MYR51.15 |
| 10 - 98 | MYR23.44 | MYR46.88 |
| 100 - 248 | MYR21.635 | MYR43.27 |
| 250 - 498 | MYR20.09 | MYR40.18 |
| 500 + | MYR19.545 | MYR39.09 |
*price indicative
- RS Stock No.:
- 215-6675
- Mfr. Part No.:
- IKW75N65EH5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 90 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 395 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 90 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 395 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon insulated-gate bipolar transistor with high speed H5 technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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