STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount

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Subtotal (1 tube of 10 units)*

MYR1,478.50

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Units
Per Unit
Per Tube*
10 - 10MYR147.85MYR1,478.50
20 - 30MYR144.597MYR1,445.97
40 +MYR141.936MYR1,419.36

*price indicative

RS Stock No.:
168-6463
Mfr. Part No.:
STGE200NB60S
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

ISOTOP

Mounting Type

Panel Mount

Channel Type

N

Pin Count

4

Transistor Configuration

Single

Dimensions

38.2 x 25.5 x 9.1mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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