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Select all	Attribute	Value
	Brand	IXYS
	Maximum Continuous Collector Current	95 A
	Maximum Collector Emitter Voltage	2500 V
	Maximum Gate Emitter Voltage	±20 V, ±30V
	Maximum Power Dissipation	937 W
	Number of Transistors	1
	Package Type	TO-268HV
	Mounting Type	Surface Mount
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	16.05 x 5.1 x 14mm
	Minimum Operating Temperature	-55 °C
	Maximum Operating Temperature	+175 °C

	Select all
	Brand IXYS
	Maximum Continuous Collector Current 95 A
	Maximum Collector Emitter Voltage 2500 V
	Maximum Gate Emitter Voltage ±20 V, ±30V
	Maximum Power Dissipation 937 W
	Number of Transistors 1
	Package Type TO-268HV
	Mounting Type Surface Mount
	Pin Count 3
	Transistor Configuration Single
	Dimensions 16.05 x 5.1 x 14mm
	Minimum Operating Temperature -55 °C
	Maximum Operating Temperature +175 °C

Thin wafer XPT™ technology
Low on-state voltages VCE(sat)
Co-packed fast recovery diodes
Positive temperature coeﬃcient of VCE(sat)
International standard size high-voltage packages
Higher eﬃciency
Elimination of multiple series-connected devices
Increased reliability of power systems
Pulser circuits
Laser and X-ray generators
High-voltage power supplies
High-voltage test equipment
Capacitor discharge circuits
AC switches

Units	Per Unit
1 - 7	MYR136.67
8 - 14	MYR132.06
15 +	MYR125.52

IXYS IXYT25N250CHV IGBT, 95 A 2500 V, 3-Pin TO-268HV, Surface Mount

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